Design of X-band 40 W Pulse-Driven GaN HEMT Power Amplifier

被引：0

作者：

Jeong, Hae-Chang ^{[1
]}

Oh, Hyun-Seok ^{[1
]}

Ahmed, Abdul-Rahman ^{[1
]}

Yeom, Kyung-Whan ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Radio Sci & Engn, Taejon 305764, South Korea

来源：

2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012) | 2012年

关键词：

GaN HEMT; Power Amplifier Module; Load-pull Measurement; Pre-Match; Fixture De-Embedding;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

In this paper, a design of X-band (9 similar to 10 GHz) 40 W Pulse-Driven GaN HEMT power amplifier is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint. The optimum input and output impedances of the GaN HEMT are extracted from load-pull measurement using automated tuner system from Maury Inc. and load-pull simulation using nonlinear model from TriQuint. The combined impedance transformer type matching circuit of the power amplifier is designed using EM co-simulation. The fabricated power amplifier which is 15x17.8 mm(2) shows an efficiency of above 32%, power gain of 8.7 similar to 6.7 dB and output power of 46.7 similar to 44.7 dBm at 9 similar to 10 GHz with pulse width of 10 mu sec and duty of 10 %.

引用

页码：466 / 468

页数：3