The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors

被引：17

作者：

Kao, CC ^{[1
]}

Lu, TC

Huang, HW

Chu, JT

Peng, YC

Yao, HH

Tsai, JY

Kao, TT

Kuo, HC

Wang, SC

Lin, CF

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 400, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 5-8期

关键词：

AlN; distributed Bragg reflector (DBR); GaN; vertical-cavity surface-emitting laser (VCSEL);

D O I：

10.1109/LPT.2006.871814

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AIN-GaN distributed Bragg reflector (DBR) and eight pairs Ta2O5-SiO2 DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3 mu m. The laser beam has a near linear polarization with a degree of polarization of about 84%. The laser shows a high spontaneous emission coupling efficiency of about 5 x 10(-2) and a high characteristic temperature of about 244 K.

引用

页码：877 / 879

页数：3

共 14 条

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