The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors

被引：17
作者：
Kao, CC [1 ]
Lu, TC
Huang, HW
Chu, JT
Peng, YC
Yao, HH
Tsai, JY
Kao, TT
Kuo, HC
Wang, SC
Lin, CF
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
[3] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 400, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 5-8期
关键词：
AlN; distributed Bragg reflector (DBR); GaN; vertical-cavity surface-emitting laser (VCSEL);
D O I：
10.1109/LPT.2006.871814
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AIN-GaN distributed Bragg reflector (DBR) and eight pairs Ta2O5-SiO2 DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3 mu m. The laser beam has a near linear polarization with a degree of polarization of about 84%. The laser shows a high spontaneous emission coupling efficiency of about 5 x 10(-2) and a high characteristic temperature of about 244 K.
引用
收藏
页码：877 / 879
页数：3
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