Pinhole-free MAPbI3 Perovskite Synthesis on PbICl Interphase Under Excess Iodide Ions by Vapor-Assisted Solution Process

Researchers have been focused on new perovskite structures due to the challenges of preparing a stable, defect-free MAPbI(3) film. Despite the growth of new perovskite synthesis techniques, vapour-assisted solution process (VASP) stands the test of time due to its well-controllability on grain size and surface coverage [1]. It is well known that the quality of the first inorganic layer plays the main role in the VASP to create a stable active layer. As reported before, PbICI inorganic layer gives us a new promising path to control the structure of perovskite film 121. Herein, a pinhole-free full covered MAPbI(3) film was produced on the PbICl inorganic first layer by a high vacuum VASP.