Physics and Statistics of Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon p-i-n Solar Cells

被引：11

作者：

Dongaonkar, Sourabh ^{[1
]}

Karthik, Y. ^{[2
]}

Mahapatra, Souvik ^{[2
]}

Alam, Muhammad A. ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47906 USA

[2] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2011年 / 1卷 / 02期

关键词：

Amorphous silicon; photovoltaic (PV) cells; shunt; thin films; A-SI; PATHS;

D O I：

10.1109/JPHOTOV.2011.2174030

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, we present a physical model of the non-Ohmic shunt current ISH in amorphous silicon (a-Si:H) p-i-n solar cells and validate it with detailed measurements. This model is based on space-charge-limited (SCL) transport through localized p-i-p shunt paths. These paths can arise from n-contact metal incorporation in the a-Si:H layer, causing the (n)a-Si:H to be counterdoped to p-type. The model not only explains all the electrical characteristics of preexisting shunts but also provides insight into the metastable switching that is observed in the shunt-dominated region of dark current as well. We first verify the SCL model using simulations and statistically robust measurements, and then use it to analyze our systematic observations of nonvolatile switching of the low-bias dark characteristics. This study interprets broad experimental observations regarding shunt behavior, and suggests possible techniques for alleviating shunt-induced performance and reliability issues.

引用

页码：111 / 117

页数：7

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