Effects of annealing temperature on the microstructure, optical, ferro electric and photovoltaic properties of BiFeO3 thin films prepared by sol-gel method

被引：69

作者：

Lin, Zebin ^{[1
]}

Cai, Wei ^{[1
]}

Jiang, Weihai ^{[1
]}

Fu, Chunlin ^{[1
,2
]}

Li, Chun ^{[3
]}

Song, Yunxia ^{[1
]}

机构：

[1] Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China

[2] State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[3] China Univ Petr, Inst Chem Engn, Qingdao 266555, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2013年 / 39卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Annealing temperature; Ferroelectric properties; Photovoltaic; Bismuth ferrite; BISMUTH FERRITE; CHEMICAL METHOD; FERROELECTRIC-FILMS; PHOTOCURRENT; OXIDE; NANOPARTICLES; SUBSTRATE; CELLS;

D O I：

10.1016/j.ceramint.2013.04.058

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bismuth ferrite thin films were prepared via sol gel spin-coating method and the effects of annealing temperature on microstructure, optical, ferroelectric and photovoltaic properties have been investigated. The results show that the bismuth ferrite thin films annealed at 550 degrees C is single phase and the grain size increases with the rise of annealing temperature. The band gap of bismuth ferrite thin films annealed at 550-650 degrees C is between 2.306 eV and 2.453 eV. With the rise of the annealing temperature, the remnant polarization gradually decreases and the coercive electric field increases. The short circuit photocurrent density decreases with the rise of annealing temperature, and the open circuit photovoltage and the power conversion efficiency of bismuth ferrite thin films annealed at 550 degrees C are higher than the thin films annealed at higher temperature. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：8729 / 8736

页数：8

共 58 条

[1] Low-temperature synthesis of nanosized bismuth ferrite by the soft chemical method [J].

Aguiar, E. C. ;

Ramirez, M. A. ;

Moura, F. ;

Varela, J. A. ;

Longo, E. ;

Simoes, A. Z. .

CERAMICS INTERNATIONAL, 2013, 39 (01) :13-20

[2] Reaction pathways in the solid state synthesis of multiferroic BiFeO3 [J].

Bernardo, M. S. ;

Jardiel, T. ;

Peiteado, M. ;

Caballero, A. C. ;

Villegas, M. .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2011, 31 (16) :3047-3053

[3] MECHANISM FOR HIGH-VOLTAGE PHOTOVOLTAIC EFFECT IN CERAMIC FERROELECTRICS [J].

BRODY, PS ;

CROWNE, F .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :955-971

[4] Vanadium doping effects on microstructure and dielectric properties of barium titanate ceramics [J].

Cai, Wei ;

Fu, Chunlin ;

Lin, Zebin ;

Deng, Xiaoling .

CERAMICS INTERNATIONAL, 2011, 37 (08) :3643-3650

[5] Preparation and optical properties of barium titanate thin films [J].

Cai, Wei ;

Fu, Chunlin ;

Gao, Jiacheng ;

Guo, Qian ;

Deng, Xiaoling ;

Zhang, Chaoyang .

PHYSICA B-CONDENSED MATTER, 2011, 406 (19) :3583-3587

[6] Understanding the nature of remnant polarization enhancement, coercive voltage offset and time-dependent photocurrent in ferroelectric films irradiated by ultraviolet light [J].

Cao, Dawei ;

Wang, Chunyan ;

Zheng, Fengang ;

Fang, Liang ;

Dong, Wen ;

Shen, Mingrong .

JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (25) :12592-12598

[7] High-Efficiency Ferroelectric-Film Solar Cells with an n-type Cu2O Cathode Buffer Layer [J].

Cao, Dawei ;

Wang, Chunyan ;

Zheng, Fengang ;

Dong, Wen ;

Fang, Liang ;

Shen, Mingrong .

NANO LETTERS, 2012, 12 (06) :2803-2809

[8] Polarization effect on the photocurrent of Pt sandwiched multi-crystalline ferroelectric films [J].

Cao, Dawei ;

Zhang, Hui ;

Fang, Liang ;

Dong, Wen ;

Zheng, Fengang ;

Shen, Mingrong .

MATERIALS CHEMISTRY AND PHYSICS, 2011, 129 (03) :783-786

[9] Physics and Applications of Bismuth Ferrite [J].

Catalan, Gustau ;

Scott, James F. .

ADVANCED MATERIALS, 2009, 21 (24) :2463-2485

[10] Tunable photovoltaic effects in transparent Pb(Zr0.53,Ti0.47)O3 capacitors [J].

Chen, Bin ;

Zuo, Zhenghu ;

Liu, Yiwei ;

Zhan, Qing-Feng ;

Xie, Yali ;

Yang, Huali ;

Dai, Guohong ;

Li, Zhixiang ;

Xu, Gaojie ;

Li, Run-Wei .

APPLIED PHYSICS LETTERS, 2012, 100 (17)

← 1 2 3 4 5 6 →