BaGd2O4 (BG):Sm3+ nanophosphors were synthesized by a solvothermal reaction method. The powder X-ray diffraction pattern confirmed their orthorhombic structure, and the morphological studies were carried out by taking the scanning and transmission electron microscopy images. The photoluminescence (PL) emission and PL excitation (PLE) spectra were investigated as a function of Sm3+ ion concentration. The PLE spectra revealed both Gd3+ and Sm3+ excitation bands in the shorter and longer wavelength regions, indicating that the efficient energy transfer occurred from the Gd3+ to Sm3+ ions in the BG host lattice. The PL spectra exhibited an intense orange emission due to ((4)G(5/2) -> H-6(7/2)) transition along with two other moderate intense emission peaks due to the ((4)G(5/2) -> H-6(5/2)) and ((4)G(5/2) -> H-6(9/2)) transitions. Based on the emission performance related to ((4)G(5/2) -> H-6(7/2)) transition, the Sm3+ ion concentration was optimized to be at 1 mol%. The low-voltage cathodoluminescent (CL) measurements were also performed for BG:1 mol% Sm3+ nanophosphors as a function of accelerating voltage and filament current. From the CL spectra, the reddish-orange emission was observed. The Commission International De I-Eclairage chromaticity coordinates of BG:Sm3+ nanophosphors were found to be very close to the chromaticity coordinates of Nichia Corporation developed amber light-emitting diodes. (C) 2014 Elsevier B.V. All rights reserved.
机构:
Changwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South Korea
Grandhe, Bhaskar Kumar
;
Bandi, Vengala Rao
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Changwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South Korea
Bandi, Vengala Rao
;
Jang, Kiwan
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Changwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South Korea
Jang, Kiwan
;
Ramaprabhu, Sundara
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Indian Inst Technol, Dept Phys, NFMTC, AENL, Madras 600036, Tamil Nadu, IndiaChangwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South Korea
Ramaprabhu, Sundara
;
Yi, Soung-Soo
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Silla Univ, Dept Elect Mat Engn, Pusan 617736, South KoreaChangwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South Korea
Yi, Soung-Soo
;
Jeong, Jung-Hyun
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Pukyong Natl Univ, Dept Phys, Pusan 608737, South KoreaChangwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South Korea
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Lakshminarayana, G.
;
Yang, R.
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Yang, R.
;
Qiu, J. R.
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Qiu, J. R.
;
Brik, M. G.
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Univ Tartu, Inst Phys, EE-51014 Tartu, EstoniaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Brik, M. G.
;
Kumar, G. A.
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Rutgers State Univ, Dept Mat Sci & Engn, Piscataway, NJ 08854 USAZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Kumar, G. A.
;
Kityk, I. V.
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Silesian Tech Univ, Dept Chem, PL-44100 Gliwice, PolandZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
机构:
Changwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South Korea
Grandhe, Bhaskar Kumar
;
Bandi, Vengala Rao
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Changwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South Korea
Bandi, Vengala Rao
;
Jang, Kiwan
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Changwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South Korea
Jang, Kiwan
;
Ramaprabhu, Sundara
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Indian Inst Technol, Dept Phys, NFMTC, AENL, Madras 600036, Tamil Nadu, IndiaChangwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South Korea
Ramaprabhu, Sundara
;
Yi, Soung-Soo
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h-index: 0
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Silla Univ, Dept Elect Mat Engn, Pusan 617736, South KoreaChangwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South Korea
Yi, Soung-Soo
;
Jeong, Jung-Hyun
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Pukyong Natl Univ, Dept Phys, Pusan 608737, South KoreaChangwon Natl Univ, Dept Phys, Changwon Si 641773, Gyeongnam, South Korea
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Lakshminarayana, G.
;
Yang, R.
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Yang, R.
;
Qiu, J. R.
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Qiu, J. R.
;
Brik, M. G.
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Univ Tartu, Inst Phys, EE-51014 Tartu, EstoniaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Brik, M. G.
;
Kumar, G. A.
论文数: 0引用数: 0
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机构:
Rutgers State Univ, Dept Mat Sci & Engn, Piscataway, NJ 08854 USAZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Kumar, G. A.
;
Kityk, I. V.
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Silesian Tech Univ, Dept Chem, PL-44100 Gliwice, PolandZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China