Amorphous silicon nanotubes via galvanic displacement deposition

被引：35

作者：

Battaglia, Mirko ^{[1
]}

Piazza, Salvatore ^{[1
]}

Sunseri, Carmelo ^{[1
]}

Inguanta, Rosalinda ^{[1
]}

机构：

[1] Univ Palermo, Lab Chim Fis Applicata, Dipartimento Ingn Chim Gest Informat Meccan, I-90128 Palermo, Italy

来源：

ELECTROCHEMISTRY COMMUNICATIONS | 2013年 / 34卷

关键词：

Silicon nanotubes; Galvanic displacement deposition; Template synthesis; Li-ion batteries; Solar cells; Amorphous silicon; SI; FABRICATION; ROUTE;

D O I：

10.1016/j.elecom.2013.05.041

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Amorphous silicon nanotubes were grown in a single step into a polycarbonate membrane by a galvanic displacement reaction conducted in aqueous solution. In order to optimize the process, a specifically designed galvanic cell was used. SEM images, after polycarbonate dissolution, showed interconnected nanotube bundles with an average length of 18 mu m and wall thickness of 38 nm. The deposited silicon was revealed by EDS analysis, whilst X-ray diffraction and Raman spectroscopy showed that nanotubes have an amorphous structure. Silicon nanotubes were also characterized by photo-electrochemical measurements that showed n-type conductivity and optical gap of similar to 1.6 eV. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：134 / 137

页数：4

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