Amorphous silicon nanotubes via galvanic displacement deposition

被引:35
作者
Battaglia, Mirko [1 ]
Piazza, Salvatore [1 ]
Sunseri, Carmelo [1 ]
Inguanta, Rosalinda [1 ]
机构
[1] Univ Palermo, Lab Chim Fis Applicata, Dipartimento Ingn Chim Gest Informat Meccan, I-90128 Palermo, Italy
关键词
Silicon nanotubes; Galvanic displacement deposition; Template synthesis; Li-ion batteries; Solar cells; Amorphous silicon; SI; FABRICATION; ROUTE;
D O I
10.1016/j.elecom.2013.05.041
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Amorphous silicon nanotubes were grown in a single step into a polycarbonate membrane by a galvanic displacement reaction conducted in aqueous solution. In order to optimize the process, a specifically designed galvanic cell was used. SEM images, after polycarbonate dissolution, showed interconnected nanotube bundles with an average length of 18 mu m and wall thickness of 38 nm. The deposited silicon was revealed by EDS analysis, whilst X-ray diffraction and Raman spectroscopy showed that nanotubes have an amorphous structure. Silicon nanotubes were also characterized by photo-electrochemical measurements that showed n-type conductivity and optical gap of similar to 1.6 eV. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:134 / 137
页数:4
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