Comparison of electronic structure between monolayer silicenes on Ag (111)

被引：10

作者：

Lin, Chun-Liang ^{[1
]}

Arafune, Ryuichi ^{[2
]}

Kawai, Maki ^{[1
]}

Takagi, Noriaki ^{[1
]}

机构：

[1] Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Chiba 2778561, Japan

[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Ibaraki 3040044, Japan

来源：

CHINESE PHYSICS B | 2015年 / 24卷 / 08期

关键词：

silicene; electronic structure; STM; DFT; CU(111); AG(111); SI;

D O I：

10.1088/1674-1056/24/8/087307

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic structures of monolayer silicenes (4 x 4 and root 13 x root 13R13.9 degrees) grown on Ag (111) surface are studied by scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations. While both phases have similar electronic structures around the Fermi level, significant differences are observed in the higher energy unoccupied states. The DFT calculations show that the contributions of Si 3p(z) orbitals to the unoccupied states are different because of their different buckled configurations.

引用

页数：5

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