The sublimation growth of AlN fibers: transformations in morphology & fiber direction

被引:18
作者
Bao, H. Q. [1 ]
Chen, X. L. [1 ]
Li, H. [1 ]
Wang, G. [1 ]
Song, B. [1 ]
Wang, W. J. [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 94卷 / 01期
基金
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词
ALUMINUM NITRIDE WHISKERS; FIELD-EMISSION; TEMPERATURE SYNTHESIS; NANOWIRES; CRYSTALS; DEPOSITION; NANOTUBES; STRAIGHT; NANORODS; ALGAN;
D O I
10.1007/s00339-008-4722-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The growth of AlN fibers using sublimation method was investigated in the temperature range from 1600 degrees C to 2000 degrees C. Large-scale AlN fibers are obtained with diameters from 100 nm to 50 mu m and lengths up to several millimeters. The fiber morphology and growth direction are characterized by X-ray diffraction (XRD), field emission scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM), and Raman scattering. The fibers change from wire-like to prism-like in morphology and increase in diameter as rising temperatures, accompanying a transformation in axial direction from [10 (1) over bar0] to [0001]. The transformation in the growth direction is discussed in terms of AlN structure and supersaturation of AlN gas species. These results provide useful information for controlling the growth of large-scale AlN fibers.
引用
收藏
页码:173 / 177
页数:5
相关论文
共 38 条
[1]   Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN [J].
Bergman, L ;
Dutta, M ;
Balkas, C ;
Davis, RF ;
Christman, JA ;
Alexson, D ;
Nemanich, RJ .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) :3535-3539
[2]   Field emission from carbon nanotubes:: the first five years [J].
Bonard, JM ;
Kind, H ;
Stöckli, T ;
Nilsson, LA .
SOLID-STATE ELECTRONICS, 2001, 45 (06) :893-914
[3]   Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride [J].
Bu, G ;
Ciplys, D ;
Shur, M ;
Schowalter, LJ ;
Schujman, S ;
Gaska, R .
APPLIED PHYSICS LETTERS, 2004, 84 (23) :4611-4613
[4]   MORPHOLOGY AND CRYSTALLOGRAPHY OF ALUMINUM NITRIDE WHISKERS [J].
CACERES, PG ;
SCHMID, HK .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (04) :977-983
[5]   Synthesis and Raman characteristics of hexagonal AlxGa1-xN alloy nanocrystalline solids through ammonothermal routes [J].
Cao, YG ;
Chen, XL ;
Lan, YC ;
Li, JY ;
Zhang, Y ;
Yang, Z ;
Liang, JK .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 72 (01) :125-127
[6]  
Chen XL, 2000, ADV MATER, V12, P1432, DOI 10.1002/1521-4095(200010)12:19<1432::AID-ADMA1432>3.0.CO
[7]  
2-X
[8]   Effect of deposition angle on fiber axis tilt in sputtered aluminum nitride and pure metal films [J].
Dellas, N. S. ;
Harper, J. M. E. .
THIN SOLID FILMS, 2006, 515 (04) :1647-1650
[9]   Preparation and characterization of straight and zigzag AIN nanowires [J].
Duan, JH ;
Yang, SG ;
Liu, HW ;
Gong, JF ;
Huang, HB ;
Zhao, XN ;
Zhang, R ;
Du, YW .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (09) :3701-3703
[10]   Approaches to seeded PVT growth of AIN crystals [J].
Epelbaum, B. M. ;
Bickermann, M. ;
Winnacker, A. .
JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) :E479-E484