Microwave plasma enhanced chemical vapor deposition diamond synthesis from high carbon content source

To synthesize diamond films by microwave plasma enhanced chemical vapor deposition (MPECVD), the methane concentration (CH4/H-2) plays a crucial role. It is well-known that there always exists a critical methane concentration (less than or equal to0.6%) only below which a good quality diamond film can be obtained. In this study, however, the phenomena of diamond synthesis resulting from high carbon concentration conditions were observed. The molten metals, e.g., Ag, Cu, were used as the deposition substrates on which crystalline diamonds can be achieved from a methane content of CH4/H(2)greater than or equal to6% or even from solid carbon sources. These results suggest that there may exist a low methane content boundary layer (<0.6%) in the proximity of molten metal surface on which suitable species, CH, CH+, H-alpha and H-beta are composed for the diamond nucleation and growth similar to the condition as in the conventional low methane contents. The molten metal inclines to dissolve other forms of carbonaceous materials other than diamond, and thus keeps a much higher steady supply of carbon atoms that enhances the quality as well as the growth rate of the forming diamonds.