Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy

被引:110
作者
Sumiya, M
Tanaka, M
Ohtsuka, K
Fuke, S
Ohnishi, T
Ohkubo, I
Yoshimoto, M
Koinuma, H
Kawasaki, M
机构
[1] Shizuoka Univ, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 4328561, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[3] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[4] Sanken Elect Co Ltd, Div Res & Dev, Niiza 3528666, Japan
关键词
D O I
10.1063/1.124478
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nondestructive determination of the polarity of GaN has been achieved by the use of coaxial impact-collision ion scattering spectroscopy analysis. The polarity of a GaN film with a smooth surface on non-nitrided c-plane sapphire was identified (0001) (Ga face; +c). GaN films with a 20 nm buffer layer on nitrided sapphire had (000 (1) over bar) (N face; -c) polarity and a hexagonal faceted surface. The influence of both the buffer layer and of substrate nitridation on the polarity of wurtzite {0001} GaN films deposited by two-step metal organic chemical vapor deposition (MOCVD) has been investigated. The polarity of the buffer layer on a nitrided sapphire substrate was altered by varying its thickness or the annealing time. It was found that the polarity of the GaN film is determined by the polarity of the annealed buffer layer; MOCVD-GaN films on buffer layers with +c and -c polarity have either +c (smooth surface) or -c (hexagonal facet) polarity, respectively. (C) 1999 American Institute of Physics. [S0003-6951(99)02131-2].
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页码:674 / 676
页数:3
相关论文
共 18 条
[1]   EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].
AKASAKI, I ;
AMANO, H ;
KOIDE, Y ;
HIRAMATSU, K ;
SAWAKI, N .
JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) :209-219
[2]  
DOUDIN B, 1996, APPL PHYS LETT, V69, P2480
[3]   Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates [J].
Fuke, S ;
Teshigawara, H ;
Kuwahara, K ;
Takano, Y ;
Ito, T ;
Yanagihara, M ;
Ohtsuka, K .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) :764-767
[4]  
ITOH T, 1999, JPN J APPL PHYS PT 1, V38, P649
[5]   Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition [J].
Keller, S ;
Keller, BP ;
Wu, YF ;
Heying, B ;
Kapolnek, D ;
Speck, JS ;
Mishra, UK ;
DenBaars, SP .
APPLIED PHYSICS LETTERS, 1996, 68 (11) :1525-1527
[6]   Thermal stability of low-temperature GaN and AlN buffer layers during metalorganic vapor phase epitaxy monitored by in situ shallow angle reflectance using ultraviolet light [J].
Kobayashi, Y ;
Akasaka, T ;
Kobayashi, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (10B) :L1208-L1210
[7]   InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates [J].
Nakamura, S ;
Senoh, M ;
Nagahama, S ;
Iwasa, N ;
Yamada, T ;
Matsushita, T ;
Kiyoku, H ;
Sugimoto, Y .
APPLIED PHYSICS LETTERS, 1996, 68 (15) :2105-2107
[8]   Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopy [J].
Ohnishi, T ;
Ohtomo, A ;
Kawasaki, M ;
Takahashi, K ;
Yoshimoto, M ;
Koinuma, H .
APPLIED PHYSICS LETTERS, 1998, 72 (07) :824-826
[9]   Coaxial impact-collision ion scattering spectroscopy analysis of ZnO thin films and single crystals [J].
Ohnishi, T ;
Ohtomo, A ;
Ohkuboa, I ;
Kawasaki, M ;
Yoshimoto, M ;
Koinuma, H .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 56 (2-3) :256-262
[10]   Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers [J].
Ponce, FA ;
Bour, DP ;
Young, WT ;
Saunders, M ;
Steeds, JW .
APPLIED PHYSICS LETTERS, 1996, 69 (03) :337-339