Formation mechanism of secondary phases in Cu2ZnSnS4 growth under different copper content

被引:19
作者
Chen, Guilin [1 ,2 ]
Wang, Weihuang [1 ]
Zhang, Jin [1 ]
Chen, Shuiyuan [1 ,2 ]
Huang, Zhigao [1 ,2 ]
机构
[1] Fujian Normal Univ, Coll Phys & Energy, Fujian Prov Key Lab Quantum Manipulat & New Energ, Fuzhou 350007, Peoples R China
[2] Fujian Prov Collaborat Innovat Ctr Optoelect Semi, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金;
关键词
CZTS thin films; Secondary phases; Semiconductors; Raman; THIN-FILMS; SOLAR-CELLS; CONVERSION EFFICIENCY; SULFURIZATION; FABRICATION; EVAPORATION;
D O I
10.1016/j.matlet.2016.09.090
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Understanding the formation mechanism of the secondary phases in Cu2ZnSnS4 (CZTS) absorber layer is necessary for the development of CZTS thin films solar cells. With this aim, the XRD, Raman and SEM were used to investigate the phases coexistence in CZTS thin films grown under different copper content. The surface of the Cu-rich CZTS thin films is rough, and the secondary phase CuxS emerges as front surface phases. Besides, another secondary phase ZnS segregates towards both front and back regions of off-stoichiometric CZTS thin films (Cu rich or Cu poor), which was evidenced by the 2nd and 3rd order of ZnS using Raman analysis excitated at 325 nm. The pure phase CZTS exists only as its composition was stoichiometric. So the preparation of pure phase CZTS is sensitive to composition, suggesting that the precise composition control plays an important role in CZTS growth.
引用
收藏
页码:98 / 101
页数:4
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