Quaternary co-electrodeposition of the Cu2ZnSnS4 films as potential solar cell absorbers

被引：7

作者：

He, Xiancong ^{[1
,2
]}

Shen, Honglie ^{[1
]}

Wang, Wei ^{[1
]}

Zhang, Baosen ^{[2
]}

Dai, Yuming ^{[2
]}

Lu, Yubao ^{[2
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Nanjing 210016, Peoples R China

[2] Nanjing Inst Technol, Dept Mat Sci & Engn, Nanjing 211167, Jiangsu, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 02期

关键词：

THIN-FILMS;

D O I：

10.1007/s10854-012-0813-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cu2ZnSnS4 (CZTS) films are successfully prepared on Mo substrate by electrochemical epitaxial method. An electrolyte contains 0.124 M CuSO4 center dot 5H(2)O, 0.14 M ZnSO4, 0.13 M SnCl2 center dot 2H(2)O, 0.16 M Na2S2O3 center dot 5H(2)O, 2.25 M NaOH, 1.36 M C6H5Na3O7, 1.00 M C4H6O6. The equilibrium potential for quaternary co-electrodeposited solution is set at -1.1 similar to -1.20 V. The results show that elements are deposited in the following sequence: Cu/S/Zn/S/Cu/S/Sn/SaEuro broken vertical bar. The ternary and quaternary compounds are formed with the increasing temperature during annealing. Finally the CZTS film can be well formed at 550 A degrees C. The resistivity of CZTS is about 5.6 x 10(4) Omega cm.

引用

页码：572 / 575

页数：4

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