Field emission from As-grown and ion-beam-sharpened diamond particles deposited on silicon tips

被引：2

作者：

Stepanova, AN ^{[1
]}

Zhirnov, VV ^{[1
]}

Bormatova, LV ^{[1
]}

Givargizov, EI ^{[1
]}

Mashkova, ES ^{[1
]}

Molchanov, VA ^{[1
]}

机构：

[1] MOSCOW MV LOMONOSOV STATE UNIV,INST NUCL PHYS,MOSCOW 119899,RUSSIA

来源：

JOURNAL DE PHYSIQUE IV | 1996年 / 6卷 / C5期

关键词：

D O I：

10.1051/jp4:1996516

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ion-beam bombardment/milling was used for sharpening of diamond particles deposited on ends of silicon tips. Radii curvature of diamond coating down to about 20 nm have been formed in such a way. Field emission experiments with sharpened diamond coated emitters have shown that the ion beam treatment effects a considerable shift of current-voltage characteristics of in the lower voltage region.

引用

页码：103 / 106

页数：4

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