Developments in the use of RHEED for interpreting growth processes in the MBE of wide gap II-VI semiconductors

被引：8
作者：
Griesche, J
Hoffmann, N
Rabe, M
Jacobs, K
机构：
[1] DCA Instruments OY, Turku 20360, Finland
[2] Humboldt Univ, Inst Phys, D-10115 Berlin, Germany
来源：
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1998年 / 37卷 / 2-3期
关键词：
D O I：
10.1016/S0960-8974(99)00002-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The reflection high-energy electron diffraction (RHEED) during molecular beam epitaxial growth enables a unique insight of how growth proceeds. The subject as a whole is reviewed and some new results including a Monte-Carlo simulation are added in order to establish a comprehensive assessment of the details of the processes that take place during MBE growth of wide-gap II-VI semiconductors. Processes that take place during growth interruptions, the occurrence of a phenomenon denoted as "material contrast", which has so far only been reported for II-VI materials, and a detailed analysis of the phase angle of RHEED oscillations are covered.
引用
收藏
页码：103 / 121
页数：19
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