Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer

被引：24

作者：

Liu, Chao ^{[1
]}

Lu, Taiping ^{[1
]}

Wu, Lejuan ^{[1
]}

Wang, Hailong ^{[1
]}

Yin, Yian ^{[1
]}

Xiao, Guowei ^{[2
]}

Zhou, Yugang ^{[2
]}

Li, Shuti ^{[1
]}

机构：

[1] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China

[2] APT Elect Ltd, Guangzhou 511458, Guangdong, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 14期

基金：

中国国家自然科学基金;

关键词：

Hole gathering layer; InGaN/GaN superlattice (SL); light-emitting diodes (LEDs); ACCEPTOR ACTIVATION; EFFICIENCY;

D O I：

10.1109/LPT.2012.2202104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaN/GaN superlattice (SL) with Mg-doped barriers was designed and inserted into the InGaN-based blue light-emitting diodes (LEDs) as a hole gathering layer (HGL) to promote hole injection into the active region. The fabricated LEDs with the SL HGL show 36.4% increase in light output power at an injection current of 200 mA. Meanwhile, the efficiency droop is also mitigated effectively, as compared to the traditional LEDs. The improved performance is attributed to increased hole injection efficiency and decreased electron leakage into the p-type region.

引用

页码：1239 / 1241

页数：3

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