Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes

被引：32

作者：

Bai, J. ^{[1
]}

Wang, Q. ^{[1
]}

Wang, T. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

dry-etching; electroluminescence; InGaN; LEDs; nanorod; ORIGIN;

D O I：

10.1002/pssa.201100456

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For the first time we demonstrate InGaN/GaN-based nanorod light emitting diodes (LEDs) with both very good current-voltage (I-V) characteristics and significantly enhanced emission. Our LED nanorods are fabricated based on InGaN/GaN LED epiwafers commercially available using self-organised Ni nano-mask and inductively coupled plasma (ICP) etching. In comparison with the conventional LED fabricated on the same wafer, our nanorod LEDs exhibit a great emission enhancement with a factor of 1.8. An extra novel step for device fabrication has been implemented, leading to significantly improved I-V characteristics with a forward-bias voltage of 3.26 V at an injection current of 20 mA, while the forward-bias voltage reported so far is typically 5-7 V for current nanorod LEDs. It is worth highlighting that our III-nitride nanorod LEDs can be truly employed for practical applications. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：477 / 480

页数：4

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