Investigations on correlation between I-V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes

被引：23

作者：

Binder, M. ^{[1
]}

Galler, B. ^{[1
]}

Furitsch, M. ^{[1
]}

Off, J. ^{[1
]}

Wagner, J. ^{[2
]}

Zeisel, R. ^{[1
]}

Katz, S. ^{[1
]}

机构：

[1] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 22期

关键词：

ELECTRICAL CHARACTERISTICS; GAN;

D O I：

10.1063/1.4833895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the electrical and optical characteristics of (AlGaIn)N multiple quantum well light-emitting diodes. Minimizing contact effects by utilizing platinum as p-contact metal, ideality factors as low as 1.1 have been achieved. In agreement with basic semiconductor theory, a correlation between ideality factor and small-current efficiency was found. We were able to emulate the experimental current-voltage characteristic over seven orders of magnitude utilizing a two diode model. This model enables a very good prediction of internal quantum efficiency at moderate current densities out of purely electrically derived parameters. (C) 2013 AIP Publishing LLC.

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页数：4

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