Carrier trapping anisotropy in ambipolar SnO thin-film transistors

被引：13

作者：

Luo, Hao ^{[1
]}

Liang, Lingyan ^{[1
]}

Cao, Hongtao ^{[1
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Div Funct Mat & Nano Devices, Ningbo 315201, Zhejiang, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2017年 / 129卷

基金：

中国国家自然科学基金;

关键词：

Tin monoxide; Ambipolar thin-film transistor; Gate-bias stress; BIAS STRESS STABILITY; HYDROGENATED AMORPHOUS-SILICON; METASTABLE DEFECTS; DEPENDENCE; TFTS; PASSIVATION; PERFORMANCE; TIME;

D O I：

10.1016/j.sse.2017.01.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The anisotropic carrier trapping behaviors was demonstrated for ambipolar tin monoxide (SnO) thin-film transistors (TFTs). On one hand, the TFTs exhibited good stability with almost no changes in transfer characteristics under negative gate-bias stress (NGBS). On the other, under positive gate-bias stress (PGBS), the transfer curves presented parallel and positive shift with no degradation in field-effect mobility and subthreshold voltage swing. The stress-time evolution of the turn-on voltage shift, induced by different positive stress voltages and temperatures, could be described by the stretched exponential model. The relaxation time was extracted to be 1.6 X 10(4) s at room temperature with activation energy of 0.43 eV, indicating that the ambipolar SnO TFTs under PGBS approach the stability of amorphous indium-gallium-zinc oxide based TFTs. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：88 / 92

页数：5

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