Semiconductor nanostructures for fundamental physics and optoelectronic applications

被引：0

作者：

Reithmaier, J. P. ^{[1
,2
]}

Forchel, A. ^{[2
]}

Krakowski, M. ^{[3
]}

Eisenstein, G. ^{[4
]}

机构：

[1] Univ Kassel, Inst Nanostruct Technol & Analyt, Dept Tech Phys, Heinrich Plett Str 40, D-34132 Kassel, Germany

[2] Univ Wurzburg, Dept Tech Phys, D-97074 Wurzburg, Germany

[3] Alcatel Thales III V Lab, F-91767 Palaiseau, France

[4] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

来源：

FUNCTIONAL PROPERTIES OF NANOSTRUCTURED MATERIALS | 2006年 / 223卷

关键词：

III-V semiconductor; quantum dots; nanostructure technology; nanophotonics; optoelectronics; quantum dot devices; quantum dot lasers; amplifiers;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An overview is given on the fabrication of semiconductor nanostructures and their applications in fundamental physics and optoelectronic devices. With advanced epitaxial growth techniques for self-assembled quantum dots in combination with high resolution lithography and high aspect ratio dry etching techniques, a new class of miniaturized quantum laboratories based on the interaction of single electrons and photons could be realised. High quality quantum dot structures are used to fabricate lasers in the wavelength range from 1 - 2 mu m. Examples are shown for telecom and high power applications with extraordinary properties based on specific quantum dot effects.

引用

页码：417 / +

页数：2

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