TFET on Selective Buried Oxide (SELBOX) Substrate with Improved ION/IOFF Ratio and Reduced Ambipolar Current

被引：38

作者：

Barah, Dhruvajyoti ^{[1
]}

Singh, Ashish Kumar ^{[1
]}

Bhowmick, Brinda ^{[1
]}

机构：

[1] Natl Inst Technol, Dept Elect & Commun Engn, Silchar 788010, Assam, India

来源：

SILICON | 2019年 / 11卷 / 02期

关键词：

Leakage current; Silicon on insulator (SOI); Selective buried oxide (SELBOX); Subthreshold swing; Tunnel field effect transistor (TFET); Band to band tunneling (BTBT); GATE TUNNEL FET; SOI MOSFETS; MODEL; OPTIMIZATION; PERFORMANCE; TRANSISTORS; DESIGN; IMPACT; NOISE;

D O I：

10.1007/s12633-018-9894-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper proposes a new structure for tunnel field effect transistor on a selective buried oxide (SELBOX) substrate. An extensive simulation study and a comparative performance analysis of the key characteristics of the proposed geometry of TFET on SELBOX substrate and the conventional fully depleted silicon-on-insulator (FDSOI) TFETs have been done. It has been found that SELBOX can significantly reduce the OFF current, without affecting the ON current of the device; hence, higher order of I-ON/I-OFF ratio (10(10)) can be obtained prevailing the advantages of FDSOI TEFTs.

引用

收藏

页码：973 / 981

页数：9

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