Three-dimensional imaging of dislocations by X-ray diffraction laminography

被引：18

作者：

Haenschke, D. ^{[1
]}

Helfen, L. ^{[2
,3
]}

Altapova, V. ^{[1
,4
]}

Danilewsky, A. ^{[5
]}

Baumbach, T. ^{[1
,2
]}

机构：

[1] KIT, Lab Applicat Synchrotron Radiat LAS, D-76128 Karlsruhe, Germany

[2] KIT, Inst Photon Sci & Synchrotron Radiat IPS ANKA, D-76344 Eggenstein, Germany

[3] ESRF, F-38043 Grenoble, France

[4] Natl Res Tomsk Polytech Univ, Tomsk 634050, Russia

[5] Univ Freiburg, Inst Geowissensch, D-79104 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 24期

关键词：

COMPUTED LAMINOGRAPHY; SILICON-WAFERS; TOMOGRAPHY; DEFECTS;

D O I：

10.1063/1.4769988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Synchrotron radiation laminography with X-ray diffraction contrast enables three-dimensional imaging of dislocations in monocrystalline wafers. We outline the principle of the technique, the required experimental conditions, and the reconstruction procedure. The feasibility and the potential of the method are demonstrated by three-dimensional imaging of dislocation loops in an indent-damaged and annealed silicon wafer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769988]

引用

页数：4

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