Hot electron injection driven phase transitions

被引：29

作者：

Hada, Masaki ^{[1
]}

Zhang, Dongfang ^{[1
]}

Casandruc, Albert ^{[1
]}

Miller, R. J. Dwayne ^{[1
]}

Hontani, Yusaku ^{[2
]}

Matsuo, Jiro ^{[2
]}

Marvel, Robert E. ^{[3
]}

Haglund, Richard F., Jr. ^{[3
]}

机构：

[1] Univ Hamburg, Ctr Free Electron Laser Sci, Max Planck Res Dept Struct Dynam, DESY, D-22607 Hamburg, Germany

[2] Kyoto Univ, Quantum Sci & Engn Ctr, Kyoto 6110011, Japan

[3] Vanderbilt Univ, Dept Phys & Astron, Stevenson Ctr 6301, Nashville, TN 37235 USA

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 13期

关键词：

INSULATOR-TRANSITION; MOTT TRANSITION; ATOMIC MOTIONS; DYNAMICS; EXCITATION;

D O I：

10.1103/PhysRevB.86.134101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a general mechanism for photo-induced phase transitions. The process relies on the photo-injection of hot electrons from an adjacent metallic layer to trigger the structural dynamics of the materials of interest. This mechanism is demonstrated for the semiconductor-to-metal phase transition of VO2 using a 20 nm Au injection layer. The nature of the phase transition is demonstrated by time-resolved optical transmission measurements, as well as a well defined bias dependence that illustrates that the Au film is the source of nonequilibrium electrons driving the phase transition.

引用

页数：6

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