Low operating voltage and high efficiency organic multilayer electroluminescent devices with p-type doped hole injection layer

被引：17

作者：

Huang, JS ^{[1
]}

Pfeiffer, M

Blochwitz, J

Werner, A

Salbeck, J

Liu, SY

Leo, K

机构：

[1] Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

[2] Univ Gesamthsch Kassel, Inst Makromol Chem, D-34109 Kassel, Germany

[3] Jilin Univ, Natl Lab Integrated Optoelect, Changchun 130023, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 11期

关键词：

p-doping; multiple well structure; organic electroluminescence; efficiency; spectra; Spiro-TAD;

D O I：

10.1143/JJAP.40.6630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate efficient organic electroluminescent devices with multiple well structure and a p-doped hole injection and transport layer (HTL). The multiple well structure improves the efficiency and the controlled p-doped HTL leads to a lower operating voltage. An amorphous starburst [4,4',4 " -tris(N,N-diphenylamino)triphenylamine] doped with a strong organic acceptor, tetrafluoro-tetracyano-quinodimethane serves as the HTL material, a spiro-linked compound, 2,2',7',7'-tetra-kis-(diphenylamine)-9,9'-spirobifluorene as an interlayer to provide a favorable interface and as a barrier within the Multiple well structure and 8-tris-hydroxyquinoline as an emitter and well. The double-well device exhibits low operating voltage, less than 4 V, for obtaining 100 cd/m(2) and the highest current efficiency exceeding 5 cd/A. Changes in the spectra due to the different well structures are also discussed.

引用

页码：6630 / 6633

页数：4