Lattice-Matched and Strain-Compensated Materials for Mid-Wave and Long-Wave Infrared Quantum Cascade Lasers

被引：2

作者：

Wang, C. A. ^{[1
]}

Calawa, D. R. ^{[1
]}

Goyal, A. K. ^{[1
]}

Menzel, S. ^{[2
]}

Capasso, F. ^{[2
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

[2] Harvard Univ, Sch Engn Appl Sci, Cambridge, MA 02138 USA

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53) | 2011年 / 41卷 / 06期

关键词：

GAINAS/ALINAS/INP; MULTILAYERS; EPITAXY; GROWTH; WELLS;

D O I：

10.1149/1.3629962

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This work reports the growth and characterization of lattice-matched (LM) and strain-compensated (SC) AlInAs/GaInAs/InP heterostructures for quantum cascade lasers (QCLs) emitting in the mid-wave infrared (MWIR) and long-wave infrared (LWIR) wavelength regions. Organometallic vapor phase epitaxy growth conditions such as temperature, growth rate, and V/III ratio were varied to establish a step-flow growth mode. Multiple-quantum-well structures with either (LM) or with SC compressive GaInAs quantum wells and tensile AlInAs barriers were grown to optimize QCL structure growth. Atomic force microscopy and high-resolution x-ray diffraction data indicate excellent structural quality materials for QCLs. LM LWIR QCLs at 9.6 mu m have pulsed peak power as high as 2.5 W/facet and pulsed wall-plug efficiency of 5.4%, while SC MWIR QCLs at 4.8 mu m have peak power of 1.7 W and 9.7% pulsed wall-plug efficiency. SC MWIR QCLs exhibit very low threshold current density of 0.8 kA/cm(2).

引用

页码：139 / 149

页数：11