Chemical doping of MoS2 multilayer by p-toluene sulfonic acid

被引：46
|
作者：
Andleeb, Shaista [1 ,2 ]
Singh, Arun Kumar [1 ,2 ,3 ]
Eom, Jonghwa [1 ,2 ]
机构：
[1] Sejong Univ, Dept Phys, Seoul 143747, South Korea
[2] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea
[3] Motilal Nehru Natl Inst Technol, Dept Phys, Allahabad 211004, Uttar Pradesh, India
来源：
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 2015年 / 16卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
molybdenum disulfide; field-effect transistor; p-toluene sulfonic acid; doping; MONOLAYER MOS2; TRANSISTORS; TRANSITION; PHOTOLUMINESCENCE;
D O I：
10.1088/1468-6996/16/3/035009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the tailoring of the electrical properties of mechanically exfoliated multilayer (ML) molybdenum disulfide (MoS2) by chemical doping. Electrical charge transport and Raman spectroscopy measurements revealed that the p-toluene sulfonic acid (PTSA) imposes n-doping in ML MoS2. The shift of threshold voltage for ML MoS2 transistor was analyzed as a function of reaction time. The threshold voltage shifted toward more negative gate voltages with increasing reaction time, which indicates an n-type doping effect. The shift of the Raman peak positions was also analyzed as a function of reaction time. PTSA treatment improved the field-effect mobility by a factor of similar to 4 without degrading the electrical characteristics of MoS2 devices.
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页数：5
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