Determination of flat band potential and photocurrent response in (Cd,Zn)S used in photoelectrolysis process

被引：34

作者：

Arriaga, LG ^{[1
]}

Fernández, AM ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Temixco, Morelos, Mexico

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2002年 / 27卷 / 01期

关键词：

hydrogen; photoelectrolysis; photocurrent; spectroscopy;

D O I：

10.1016/S0360-3199(01)00084-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The mixture of US and ZnS semiconductors was identified as a promising material, since its band gap (2.4 eV) absorbs in the visible region and has sufficient energy to take away hydrogen production reaction (Int. J. Hydrogen Energy 11 (1998) 995). ZnS and US were prepared by chemical bath processes, mixed to form a paste and then deposited on glass as well as stainless-steel by a screen printing and sintering technique. The flat band potential and therefore the energy of the band edges were calculated using techniques of photocurrent and capacitance-voltage (C-V). The measurements of C-V were carried out at 20 kHz. The photocurrent properties of the films were characterized using a xenon lamp with a chopper system. (C) 2001 International Association for Hydrogen Energy. Published by Elsevier Science Ltd. All rights reserved.

引用

页码：27 / 31

页数：5

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