Nature of the transitional region during the deposition of titanium boride and nitride films on gallium arsenide

被引：2

作者：

Ermolovich, IB ^{[1
]}

Konakova, RV ^{[1
]}

Milenin, VV ^{[1
]}

Senkevich, AI ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, Kiev, Ukraine

来源：

TECHNICAL PHYSICS LETTERS | 1999年 / 25卷 / 10期

关键词：

Spectroscopy; Titanium; Solid Solution; Thermal Stability; Nitride;

D O I：

10.1134/1.1262636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence and x-ray photoelectron spectroscopy methods were used to analyze the compositions of the near-junction regions of titanium boride (nitride)-gallium arsenide heterostructures. Data have been obtained for the first time on the formation of GaxB1-xAs and GaAsxN1-x solid solutions, which play an important role in the formation of the properties and the thermal stability of the experimental structures on the interphase boundary of these structures. (C) 1999 American Institute of Physics.

引用

页码：789 / 791

页数：3

共 7 条

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