Characteristics of metal-ferroelectric-insulator-semiconductor diodes composed of Pt electrodes and epitaxial Sr0.8Bi2.2Ta2O9(001)/SrTiO3(100)/Si(100) structures

被引：15

作者：

Lu, Xubing ^{[1
]}

Ishiwara, Hiroshi ^{[1
]}

Gu, Xing ^{[2
]}

Lubyshev, Dmitri ^{[2
]}

Fastenau, Joel ^{[2
]}

Pelzel, Rodney ^{[2
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan

[2] IQE Inc, Bethlehem, PA 18015 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 02期

关键词：

bismuth compounds; electrodes; elemental semiconductors; epitaxial layers; ferroelectric storage; ferroelectric thin films; ferroelectricity; MFIS structures; platinum; silicon; strontium compounds; X-ray diffraction; FIELD-EFFECT TRANSISTORS; BUFFER LAYERS; THIN-FILMS; SI; RETENTION; SILICON; SRTIO3; HFO2;

D O I：

10.1063/1.3065474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial metal-ferroelectric-insulator-semiconductor diodes were fabricated by depositing a chemical-solution-decomposed Sr0.8Bi2.2Ta2O9 (SBT) film on an SrTiO3-coated Si(100) wafer. X-ray diffraction analysis revealed that the SBT film was composed mostly of c-axis-oriented grains. In Pt/SBT(300 nm)/SrTiO3(23 nm)/Si diodes, a memory window as wide as 1.1 V was obtained for a voltage sweep of +/- 7 V in capacitance-voltage measurement. The capacitance change in per decade increase in the retention time was approximately 10% up to 24 h. The origin of the ferroelectricity in a c-axis-oriented SBT film is discussed.

引用

页数：4

共 9 条

[1] Improved electrical properties of Sr0.8Bi2.2Ta2O9 films by ZrSiO4 doping for low voltage operations of metal-ferroelectric-insulator-Si devices
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JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)
[2] Ferroelectric Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films
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[3] Electrical and memory window properties of Sr0.8-xBaxBi2.2Ta2-yZryO9 ferroelectric gate in metal-ferroelectric-insulator-semiconductor structure
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[4] Fabrication and Characterization of ZnO:Al/Sr0.8Bi2.2Ta2O9/Y2O3:Eu Structures for Ferroelectric-Electroluminescent Devices
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[6] Metal (Pt)/ferroelectric (SrBi2Ta2O9)/insulator (La2O3)/semiconductor (Si), MFIS structures for nonvolatile memory applications
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[7] Epitaxial growth of Bi4Ti3O12/CeO2/Ce0.12Zr0.88O2 and Bi4Ti3O12/SrTiO3/Ce0.12Zr0.88O2 thin films on Si and its application to metal-ferroelectric-insulator-semiconductor diodes
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[8] Ferroelectric domain structures of epitaxial CaBi2Nb2O9 thin films on single crystalline Nb doped (100) SrTiO3 substrates
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