Chemically assembled double-dot single-electron transistor analyzed by the orthodox model considering offset charge

被引：13
作者：
Kano, Shinya [1 ]
Maeda, Kosuke [1 ]
Tanaka, Daisuke [2 ,3 ]
Sakamoto, Masanori [3 ,4 ]
Teranishi, Toshiharu [3 ]
Majima, Yutaka [1 ]
机构：
[1] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan
[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan
[3] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan
[4] Japan Sci & Technol Agcy, PRESTO, Uji, Kyoto 6110011, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 118卷 / 13期
关键词：
QUANTUM-DOT; NANOGAP ELECTRODES; GOLD; NANOPARTICLE; SPECTROSCOPY; CONDUCTANCE; FABRICATION; MONOLAYERS; TRANSPORT; DEVICES;
D O I：
10.1063/1.4931611
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present the analysis of chemically assembled double-dot single-electron transistors using orthodox model considering offset charges. First, we fabricate chemically assembled single-electron transistors (SETs) consisting of two Au nanoparticles between electroless Au-plated nanogap electrodes. Then, extraordinary stable Coulomb diamonds in the double-dot SETs are analyzed using the orthodox model, by considering offset charges on the respective quantum dots. We determine the equivalent circuit parameters from Coulomb diamonds and drain current vs. drain voltage curves of the SETs. The accuracies of the capacitances and offset charges on the quantum dots are within +/- 10%, and +/- 0.04e (where e is the elementary charge), respectively. The parameters can be explained by the geometrical structures of the SETs observed using scanning electron microscopy images. Using this approach, we are able to understand the spatial characteristics of the double quantum dots, such as the relative distance from the gate electrode and the conditions for adsorption between the nanogap electrodes. (C) 2015 AIP Publishing LLC.
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页数：6
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