Comparison of Polished and Dry Etched Semipolar (11(2)over-bar2) III-Nitride Laser Facets

被引：6

作者：

Hsu, Po Shan ^{[1
,2
]}

Farrell, Robert M. ^{[1
,2
]}

Weaver, Jeremiah J. ^{[1
,2
]}

Fujito, Kenji ^{[3
]}

DenBaars, Steven P. ^{[1
,2
]}

Speck, James S. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Mitsubishi Chem Corp, Optoelect Lab, Ibaraki 3001295, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 21期

关键词：

Facets; GaN; III-nitride; lasers; nonpolar; semipolar;

D O I：

10.1109/LPT.2013.2281608

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We compare facet morphology, device characteristics, and far field patterns (FFPs) for semipolar (11 (2) over bar2) laser diodes fabricated with mechanically polished and dry etched mirror facets. Facets formed by Cl-2-based dry etching produced inclined and heavily striated facets. Mechanically polished facets, in contrast, provided vertical and smooth facets (rms roughness = 5.2 nm). The threshold currents of polished facet devices were on average similar to 100 and similar to 200 mA lower than etched facet devices (2x1200 mu m(2) and 4 x 1200 mu m(2) dimension devices, respectively). FFPs from etched facets were also shown to be obscured due to substrate reflections.

引用

页码：2105 / 2107

页数：3

共 19 条

[1] InGaN laser diodes with 50 mW output power emitting at 515 nm [J].

Avramescu, Adrian ;

Lermer, Teresa ;

Mueller, Jens ;

Tautz, Soenke ;

Queren, Desiree ;

Lutgen, Stephan ;

Strauss, Uwe .

APPLIED PHYSICS LETTERS, 2009, 95 (07)

[2]

Enya Y., 2009, APPL PHYS EXP, V2

[3]

Farrell R. M., 2011, APPL PHYS LETT, V99

[4]

Hsu P. S., 2012, APPL PHYS LETT, V100

[5] InGaN/GaN Blue Laser Diode Grown on Semipolar (30(3)over-bar1) Free-Standing GaN Substrates [J].

Hsu, Po Shan ;

Kelchner, Kathryn M. ;

Tyagi, Anurag ;

Farrell, Robert M. ;

Haeger, Daniel A. ;

Fujito, Kenji ;

Ohta, Hiroaki ;

DenBaars, Steven P. ;

Speck, James S. ;

Nakamura, Shuji .

APPLIED PHYSICS EXPRESS, 2010, 3 (05) :10DUMY

[6]

Huang C., 2011, APPL PHYS LETT, V99

[7] Optical and microstructural properties of semi-polar (11-22) InGaN/GaN quantum well structures [J].

Hylton, Nicholas P. ;

Dawson, Philip ;

Johnston, Carol F. ;

Kappers, Menno J. ;

Hollander, Jonathan L. ;

McAleese, Clifford ;

Humphreys, Colin J. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 :S727-S730

[8] Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes [J].

Melo, T. ;

Hu, Y-L ;

Weisbuch, C. ;

Schmidt, M. C. ;

David, A. ;

Ellis, B. ;

Poblenz, C. ;

Lin, Y-D ;

Krames, M. R. ;

Raring, J. W. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (02)

[9] 510-515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate [J].

Miyoshi, Takashi ;

Masui, Shingo ;

Okada, Takeshi ;

Yanamoto, Tomoya ;

Kozaki, Tokuya ;

Nagahama, Shin-ichi ;

Mukai, Takashi .

APPLIED PHYSICS EXPRESS, 2009, 2 (06)

[10] Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors [J].

Park, SH ;

Chuang, SL .

PHYSICAL REVIEW B, 1999, 59 (07) :4725-4737

← 1 2 →