Phonon bottleneck in p-type Ge/Si quantum dots

被引：13

作者：

Yakimov, A. I. ^{[1
,2
]}

Kirienko, V. V. ^{[1
]}

Armbrister, V. A. ^{[1
]}

Bloshkin, A. A. ^{[1
,3
]}

Dvurechenskii, A. V. ^{[1
,3
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Tomsk State Univ, Tomsk 634050, Russia

[3] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 21期

关键词：

PHOTOCURRENT SPECTROSCOPY; NOISE GAIN; DETECTIVITY;

D O I：

10.1063/1.4936340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied by changing the Ge coverage and the growth temperature during molecular beam epitaxy of Ge/Si(001) system in the Stranski-Krastanov growth mode. In all samples, we observed the general tendency: with decreasing the size of the dots, the dark current and hole capture probability are reduced, while the photoconductive gain and photoresponse are enhanced. Suppression of the hole capture probability in small-sized quantum dots is attributed to a quenched electron-phonon scattering due to phonon bottleneck. (C) 2015 AIP Publishing LLC.

引用

页数：4

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