Rutherford backscattering studies of strain-relaxed SiGe films grown on Si substrate with compositionally graded buffer layers

被引：3

作者：

Watanabe, Yoshinori ^{[1
]}

Oshima, Ryuji ^{[2
]}

Sakata, Isao ^{[2
]}

Matsubara, Koji ^{[2
]}

Sakamoto, Isao ^{[1
]}

机构：

[1] Hosei Univ, Grad Sch Engn, Koganei, Tokyo 1848584, Japan

[2] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 378卷

关键词：

Crystal structure; Molecular beam epitaxy; Germanium-silicon alloy; Semiconducting silicon compounds; DISLOCATION DENSITY; RELAXATION; HETEROSTRUCTURES; MORPHOLOGY;

D O I：

10.1016/j.jcrysgro.2012.12.059

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the structural properties of 2-mu m thick Si0.58Ge0.42 thin films grown on a combined set of Si1-xGex stepwise buffer layers and a Si0.51Ge0.49 strain-inverted layer on Si substrates. Raman spectroscopy and Rutherford backscattering measurements showed smaller residual strain and superior crystalline lattice ordering compared to a sample without any buffer layer. Furthermore, a Si0.58Ge0.42 thin film with a low dislocation density of less than 10(5) cm(-2) and a smooth surface roughness of 0.903 nm can be achieved by using a combined set of Si1-xGex stepwise buffer layers and a Si0.51Ge0.49 strain-inverted layer, because most dislocations can be confined within each Si1-xGex buffer layer. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：205 / 207

页数：3

共 15 条

[1] Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate
Chen, CC
Yu, BH
Liu, JF
Cao, JQ
Zhu, DZ
Liu, ZH
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 239 (04) : 433 - 439
[2] Fitzgerald EA, 1999, PHYS STATUS SOLIDI A, V171, P227, DOI 10.1002/(SICI)1521-396X(199901)171:1<227::AID-PSSA227>3.0.CO
[3] 2-Y
[4] Line, point and surface defect morphology of graded, relaxed GeSi alloys on Si substrates
Fitzgerald, EA
Samavedam, SB
[J]. THIN SOLID FILMS, 1997, 294 (1-2) : 3 - 10
[5] Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density
Gaiduk, PI
Larsen, AN
Hansen, JL
[J]. THIN SOLID FILMS, 2000, 367 (1-2) : 120 - 125
[6] Thin-Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells: Design and Material Quality Requirements
Hadi, Sabina Abdul
Hashemi, Pouya
Nayfeh, Ammar
Hoyt, Judy L.
[J]. PHOTOVOLTAICS FOR THE 21ST CENTURY 7, 2011, 41 (04): : 3 - 14
[7] Strain and misfit dislocation density in finite lateral size Si1-xGex films grown by selective epitaxy
Hollander, B
Vescan, L
Mesters, S
Wickenhauser, S
[J]. THIN SOLID FILMS, 1997, 292 (1-2) : 213 - 217
[8] STRAIN RELAXATION PHENOMENA IN GEXSI1-X/SI STRAINED STRUCTURES
HULL, R
BEAN, JC
EAGLESHAM, DJ
BONAR, JM
BUESCHER, C
[J]. THIN SOLID FILMS, 1989, 183 : 117 - 132
[9] Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step
Jiang, Zhongwei
Wang, Wenxin
Gao, Hanchao
Liu, Linshen
Chen, Hong
Zhou, Junming
[J]. APPLIED SURFACE SCIENCE, 2008, 254 (16) : 5241 - 5246
[10] Strain relaxation and dislocations in SiGe/Si structures
Mooney, PM
[J]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1996, 17 (03) : 105 - 146

← 1 2 →