Cobalt thin films prepared by chemical vapor deposition from cobalt acetylacetonates

被引:22
作者
Maruyama, T
机构
[1] Kyoto Univ, Kyoto, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 6A期
关键词
cobalt; thin film; chemical vapor deposition; cobalt(II) acetylacetonate; cobalt(III) acetylacetonate;
D O I
10.1143/JJAP.36.L705
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cobalt thin films were prepared by low-temperature atmospheric-pressure chemical vapor deposition from cobalt(II) acetylacetonate and cobalt(III) acetylacetonate. The resistivity was low (10-30 mu Omega.cm) and independent of film thickness, when the film thickness ranged from 150 to 700 nm, The thin films deposited from cobalt(III) acetylacetonate consisted of particles of uniform diameter, and consequently an island structure of high resistivity was formed on the substrate when the film thickness mas less than 150 nm. A similar island structure of high resistivity but one order of magnitude larger than that for the thin films was formed for the thick films deposited from cobalt(II) acetylacetonate.
引用
收藏
页码:L705 / L707
页数:3
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