Cobalt thin films prepared by chemical vapor deposition from cobalt acetylacetonates

Cobalt thin films were prepared by low-temperature atmospheric-pressure chemical vapor deposition from cobalt(II) acetylacetonate and cobalt(III) acetylacetonate. The resistivity was low (10-30 mu Omega.cm) and independent of film thickness, when the film thickness ranged from 150 to 700 nm, The thin films deposited from cobalt(III) acetylacetonate consisted of particles of uniform diameter, and consequently an island structure of high resistivity was formed on the substrate when the film thickness mas less than 150 nm. A similar island structure of high resistivity but one order of magnitude larger than that for the thin films was formed for the thick films deposited from cobalt(II) acetylacetonate.