Effect of Ag/Al co-doping method on optically p-type ZnO nanowires synthesized by hot-walled pulsed laser deposition

被引：15

作者：

Kim, Kyoungwon ^{[2
,4
]}

Lee, Deuk-Hee ^{[2
]}

Lee, Sang Yeol ^{[1
]}

Jang, Gun-Eik ^{[3
]}

Kim, Jin-Sang ^{[2
]}

机构：

[1] Cheongju Univ, Dept Semicond Engn, Cheongju 360764, Chungbuk, South Korea

[2] Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 130650, South Korea

[3] Chungbuk Natl Univ, Dept Adv Mat Engn, Cheongju 361763, South Korea

[4] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

NANOSCALE RESEARCH LETTERS | 2012年 / 7卷

关键词：

SAZO nanowire; Photoluminescence; Ag/Al co-doping method; Exciton bound to a neutral acceptor; THIN-FILMS; ELECTRICAL-PROPERTIES; PHOTOLUMINESCENCE; FABRICATION; NANORODS;

D O I：

10.1186/1556-276X-7-273

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silver and aluminum-co-doped zinc oxide (SAZO) nanowires (NWs) of 1, 3, and 5 at.% were grown on sapphire substrates. Low-temperature photoluminescence (PL) was studied experimentally to investigate the p-type behavior observed by the exciton bound to a neutral acceptor (A(0)X). The A(0)X was not observed in the 1 at.% SAZO NWs by low-temperature PL because 1 at.% SAZO NWs do not have a Ag-O chemical bonding as confirmed by XPS measurement. The activation energies (E (a)) of the A(0)X were calculated to be about 18.14 and 19.77 meV for 3 and 5 at.% SAZO NWs, respectively, which are lower than the activation energy of single Ag-doped NW which is about 25 meV. These results indicate that Ag/Al co-doping method is a good candidate to make optically p-type ZnO NWs.

引用

页数：7

共 31 条

[1] Micron and submicron patterning of polydimethylsiloxane resists on electronic materials by decal transfer lithography and reactive ion-beam etching: Application to the fabrication of high-mobility, thin-film transistors [J].

Ahn, Heejoon ;

Lee, Keon Jae ;

Childs, William R. ;

Rogers, John A. ;

Nuzzo, Ralph G. ;

Shim, Anne .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (08)

[2] Pulsed laser ablation and deposition of thin films [J].

Ashfold, MNR ;

Claeyssens, F ;

Fuge, GM ;

Henley, SJ .

CHEMICAL SOCIETY REVIEWS, 2004, 33 (01) :23-31

[3] Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis [J].

Bian, JM ;

Li, XM ;

Gao, XD ;

Yu, WD ;

Chen, LD .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :541-543

[4] Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses [J].

Dai, YT ;

Fan, JC ;

Chen, YF ;

Lin, RM ;

Lee, SC ;

Lin, HH .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) :4489-4492

[5] Photoelectric properties of ZnO films doped with Cu and Ag acceptor impurities [J].

Gruzintsev, AN ;

Volkov, VT ;

Yakimov, EE .

SEMICONDUCTORS, 2003, 37 (03) :259-262

[6] Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering -: art. no. 151917 [J].

Hwang, DK ;

Kim, HS ;

Lim, JH ;

Oh, JY ;

Yang, JH ;

Park, SJ ;

Kim, KK ;

Look, DC ;

Park, YS .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

[7] Fabrication of the low-resistive p-type ZnO by codoping method [J].

Joseph, M ;

Tabata, H ;

Saeki, H ;

Ueda, K ;

Kawai, T .

PHYSICA B-CONDENSED MATTER, 2001, 302 :140-148

[8] A sonochemical method for fabricating aligned ZnO nanorods [J].

Jung, Seung-Ho ;

Oh, Eugene ;

Lee, Kun-Hong ;

Park, Wanjun ;

Jeong, Soo-Hwan .

ADVANCED MATERIALS, 2007, 19 (05) :749-+

[9] Structural, electrical, and optical properties of p-type ZnO thin films with Ag dopant [J].

Kang, Hong Seong ;

Du Ahn, Byung ;

Kim, Jong Hoon ;

Kim, Gun Hee ;

Lim, Sung Hoon ;

Chang, Hyun Woo ;

Lee, Sang Yeol .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[10] Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant [J].

Kim, KK ;

Kim, HS ;

Hwang, DK ;

Lim, JH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2003, 83 (01) :63-65

← 1 2 3 4 →