Mid-infrared integrated photonics on silicon: a perspective

被引:347
作者
Lin, Hongtao [1 ,2 ]
Luo, Zhengqian [1 ,3 ]
Gu, Tian [2 ]
Kimerling, Lionel C. [1 ,2 ]
Wada, Kazumi [1 ,2 ]
Agarwal, Anu [2 ]
Hu, Juejun [1 ,2 ]
机构
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[2] MIT, Mat Proc Ctr, Cambridge, MA 02139 USA
[3] Xiamen Univ, Dept Elect Engn, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
mid-IR; integrated photonics; silicon photonics; spectrometer; optical sensor; SUBWAVELENGTH GRATING COUPLER; NONLINEAR-OPTICAL RESPONSE; FREQUENCY COMB GENERATION; CHALCOGENIDE WAVE-GUIDES; QUANTUM CASCADE LASERS; GE-ON-SI; MU-M; BROAD-BAND; SUPERCONTINUUM GENERATION; SINGLE-MODE;
D O I
10.1515/nanoph-2017-0085
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-mu m wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.
引用
收藏
页码:393 / 420
页数:28
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