Atomic simulations of effect on thermal conductivity of ion-irradiated graphene

被引:1
作者
Gu, Jinjie [1 ]
Huang, Lirong [1 ]
Shi, Weiqi [2 ]
机构
[1] Hunan Univ Finance & Econ, Sch Informat Technol & Management, Changsha 410205, Hunan, Peoples R China
[2] Hunan Prov Key Lab Network Invest Technol, Changsha 410138, Hunan, Peoples R China
关键词
Graphene; Ion irradiation; Molecular dynamics simulation; Defect; Thermal conductivity; DEFECTS; ENHANCEMENT; MANAGEMENT;
D O I
10.1016/j.physb.2018.11.016
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
It is an effective approach to manipulate the physical properties of graphene by defects produced by ion irradiation. In this work, we first simulate the process of ions bombardment on graphene by molecular dynamics, present the relationship between the probability of defects occurrence and the kinetic energy of incident ions. Whereafter we calculate the thermal conductivity of graphene suffering from ions irradiation by non-equilibrium molecular dynamics simulation. It is found that the thermal conductivity of graphene is remarkably suppressed by ions irradiation due to the generation of defects such as adatoms and vacancies. The underlying influence of irradiation dose and kinetic energy of incident ions on the thermal conductivity of graphene is well interpreted by the probability of defects occurrence. Our findings are helpful for understanding and tuning the thermal conductivity of graphene by defect engineering.
引用
收藏
页码:40 / 44
页数:5
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