Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices

被引：46

作者：

Huang, Biqin ^{[1
]}

Jang, Hyuk-Jae ^{[1
]}

Appelbaum, Ian ^{[2
,3
]}

机构：

[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

[2] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

[3] Univ Maryland, Ctr Nanophys & Adv Mat, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 16期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.3006333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Evidence of spin precession and dephasing ("Hanle effect") induced by a magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very strong, Hanle effect in a uniaxial magnetic field can be impossible to measure. Using a silicon device with lateral injector-detector separation of over 2 mm and geometrically induced dephasing making spin transport completely incoherent, we show experimentally and theoretically that Hanle effect can still be measured using a two-axis magnetic field. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3006333]

引用

页数：3

共 12 条

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