Pulsed laser deposition of nanometric and micrometric films for optoelectronic applications

被引：0

作者：

De Giorgi, ML ^{[1
]}

Elia, L ^{[1
]}

Fernandez, M ^{[1
]}

Leggieri, G ^{[1
]}

Luches, A ^{[1
]}

Martino, M ^{[1
]}

Zocco, A ^{[1
]}

机构：

[1] INFM, I-73100 Lecce, Italy

来源：

NONRESONANT LASER-MATTER INTERACTION (NLMI-10) | 2001年 / 4423卷

关键词：

laser ablation; thin films; oxides; optoelectronics;

D O I：

10.1117/12.431212

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We ablated Si, SiO and ITO targets in low-pressure O-2 (0.1-5 Pa) with XeCl and KrF laser pulses at fluences of 5-8 J/cm(2). The films were deposited on Si < 100 > and glass (BK7) substrates at temperatures of 20-600 degreesC. The substrates were generally set parallel to the target. To reduce droplet deposition, some films were deposited in off-axis configuration or using the so-called "eclipse method", characterized by a shadow mask between target and substrate. Dense, continuous ITO films with resistivity as low as 1.6x10(-4) Omega cm and a high transparency (80-90%) in the visible region were deposited. Ultra-thin (similar to6 nm) films were deposited and successfully used as electrodes in optoelectronic devices. Dense, stoichiometric, thick (>2 mum) SiO2 films were deposited on substrates either at room temperature or heated at moderate temperatures (100-600 degreesC). Droplet density and surface roughness are kept quite low (similar to5 nm) by using special deposition configurations. It results that multi-component films like ITO (indium tin oxide) and silica (SiO2) can be efficiently deposited by using the reactive pulsed laser deposition technique.

引用

页码：8 / 17

页数：10

共 10 条

[1] LOW-TEMPERATURE SYNTHESIS OF SILICON-OXIDE, OXYNITRIDE, AND NITRIDE FILMS BY PULSED EXCIMER-LASER ABLATION [J].