Enhancement of green terbium-related photoluminescence from highly doped microporous alumina xerogels in mesoporous anodic alumina

被引:31
作者
Gaponenko, NV [1 ]
Molchan, IS
Sergeev, OV
Thompson, GE
Pakes, A
Skeldon, P
Kudrawiec, R
Bryja, L
Misiewicz, J
Pivin, JC
Hamilton, B
Stepanova, EA
机构
[1] Belarussian State Univ Informat & Radioelect, Minsk, BELARUS
[2] Univ Manchester, Inst Sci & Technol, Ctr Corros & Protect, Manchester M60 1QD, Lancs, England
[3] Univ Manchester, Inst Sci & Technol, Dept Phys, Manchester M60 1QD, Lancs, England
[4] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
[5] Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France
[6] Byelarussian Acad Sci, Inst Gen & Inorgan Chem, Minsk, BELARUS
关键词
D O I
10.1149/1.1429929
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Strong enhancement of green photoluminescence (PL) from microporous alumina xerogels, highly doped with terbium (from 30 to 60 wt % as Tb2O3), is reported. The regular structure of a 30 mm thick, mesoporous anodic alumina layer was exploited for spin-on deposition of the alumina xerogel in a single step. The green PL, associated with predominant D-5(4) --> F-7(5) transitions, along with D-5(4) --> F-7(j), j = 3, 4, 5, 6 transitions of Tb3+, was found to increase with terbium concentration in the alumina xerogel. This effect is attributed to cross-relaxation. The thermal quenching of the green terbium-related emission does not exceed a factor of two within a temperature range from 10 to 300 K for any of the alumina xerogels confined in anodic alumina. Further, such quenching is much reduced with the rise of temperature compared with (i) Tb-doped titania xerogel, (ii) Tb-implanted thermally grown silicon dioxide film, and (iii) Tb-doped alumina xerogels fabricated onto monocrystalline silicon. Thus, the terbium-doped structure comprising alumina xerogel/anodic alumina is proposed as a basis for green room-temperature luminescent images. (C) 2001 The Electrochemical Society.
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收藏
页码:H49 / H52
页数:4
相关论文
共 17 条
  • [1] Room-temperature photoluminescence from Tb ions implanted in SiO2 on Si
    Amekura, H
    Eckau, A
    Carius, R
    Buchal, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) : 3867 - 3871
  • [2] The structural and luminescence properties of porous silicon
    Cullis, AG
    Canham, LT
    Calcott, PDJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 909 - 965
  • [3] ERBIUM LUMINESCENCE IN POROUS SILICON DOPED FROM SPIN-ON FILMS
    DOROFEEV, AM
    GAPONENKO, NV
    BONDARENKO, VP
    BACHILO, EE
    KAZUCHITS, NM
    LESHOK, AA
    TROYANOVA, GN
    VOROSOV, NN
    BORISENKO, VE
    GNASER, H
    BOCK, W
    BECKER, P
    OECHSNER, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) : 2679 - 2683
  • [4] Erbium and terbium photoluminescence in silica sol-gel films on porous alumina
    Gaponenko, NV
    Parkun, VM
    Katernoga, OS
    Borisenko, VE
    Mudryi, AV
    Stepanova, EA
    Ratko, AI
    Cavanagh, M
    OKelly, B
    McGilp, JF
    [J]. THIN SOLID FILMS, 1997, 297 (1-2) : 202 - 206
  • [5] Strongly enhanced Tb luminescence from titania xerogel solids mesoscopically confined in porous anodic alumina
    Gaponenko, NV
    Davidson, JA
    Hamilton, B
    Skeldon, P
    Thompson, GE
    Zhou, X
    Pivin, JC
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (08) : 1006 - 1008
  • [6] Optical and structural characterization of erbium-doped TiO2 xerogel films processed on porous anodic alumina
    Gaponenko, NV
    Sergeev, OV
    Stepanova, EA
    Parkun, VM
    Mudryi, AV
    Gnaser, H
    Misiewicz, J
    Heiderhoff, R
    Balk, LJ
    Thompson, GE
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (02) : H13 - H16
  • [7] Formation and characterization of CdS/methyl-grafted porous silicon junctions
    Gros-Jean, M
    Herino, R
    Chazalviel, JN
    Ozanam, F
    Lincot, D
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 : 77 - 80
  • [8] Infrared photoluminescence from Er doped porous Si
    Henley, W
    Koshka, Y
    Lagowski, J
    Siejka, J
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) : 7848 - 7852
  • [10] ELECTROCHEMICAL ER DOPING OF POROUS SILICON AND ITS ROOM-TEMPERATURE LUMINESCENCE AT SIMILAR-TO-1.54 MU-M
    KIMURA, T
    YOKOI, A
    HORIGUCHI, H
    SAITO, R
    IKOMA, T
    SATO, A
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (08) : 983 - 985