Low-Frequency Noise in a-Se Based X-Ray Photoconductors

被引：0

作者：

Meyer, Thomas ^{[1
]}

Johanson, Robert ^{[1
]}

Belev, George ^{[1
]}

Kasap, Safa ^{[1
]}

机构：

[1] Univ Saskatchewan, Dept Elect & Comp Engn, Saskatoon, SK S7N 5A9, Canada

来源：

2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2011年

关键词：

AMORPHOUS SELENIUM; IMAGE DETECTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the excess, low-frequency noise in pin-like amorphous selenium alloy structures that are used in direct-conversion x-ray imaging detectors. These are the first measurements of the noise power density spectrum in these structures under reverse bias. Of the two samples measured, one has a noise spectrum that fits well to a 1/f(alpha) power law with alpha near one. The 1/f noise is not atypical except for a nonlinear dependence on d.c. current at fields above 5 V mu m. The variance in correlated double sampling measurements of the noise signal is calculated and related to the 1/f noise spectrum. The other sample has a white noise spectrum down to 10(-2) Hz. The white noise of the second sample is larger than the 1/f noise and is likely masking the 1/f noise over the measured frequency range. The origin of the white noise is not known.

引用

页码：393 / 396

页数：4

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