1064 nm High-Power Broad Area Semiconductor Lasers with Electrode Pattern

被引：0

作者：

Qiao, Zhongliang ^{[1
]}

Zhang, Siyu ^{[1
]}

Gao, Xin ^{[1
]}

Lu, Peng ^{[1
]}

Li, Hui ^{[1
]}

Qu, Yi ^{[1
]}

Lui, Guojun ^{[1
]}

Bo, Baoxue ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China

来源：

GREEN POWER, MATERIALS AND MANUFACTURING TECHNOLOGY AND APPLICATIONS, PTS 1 AND 2 | 2011年 / 84-85卷

关键词：

broad area semiconductor lasers; photon gain; distribution electrode;

D O I：

10.4028/www.scientific.net/AMM.84-85.590

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

According to the principle of carrier diffusion, aluminum nitride (AlN) coating, and RIE deep etching technology are implemented, 1064 nm broad area distribution electrode lasers have been obtained exhibiting near single lobe near and far field. We report electrode pattern lasers emitting at 1064 tun with the minimal full width at half maximum (FWHM) horizontal angle of 2.7 degrees while the maximum continuous-wave output power up to 3.65 W and slope efficiencies as high as 0.85 W/A.

引用

页码：590 / 593

页数：4

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