Dielectric, ac conductivity and electric modulus studies at MPS structure with (Cu2O-CuO)-doped PVA interfacial layer

被引:0
作者
Buyukbas-Ulusan, A. [1 ]
Yeriskin, S. Altindal [2 ]
Tataroglu, A. [1 ]
Balbasi, M. [2 ]
Azizian-Kalandaragh, Y. [3 ,4 ]
机构
[1] Gazi Univ, Fac Sci, Dept Phys, Ankara, Turkey
[2] Gazi Univ, Fac Engn, Dept Chem Engn, Ankara, Turkey
[3] Univ Mohaghegh Ardabili, Fac Sci, Dept Phys, Ardebil, Iran
[4] Sabalan Univ Adv Technol, Dept Engn Sci, Namin, Iran
来源
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2020年 / 14卷 / 5-6期
关键词
MPS structure; Complex dielectric and electric modulus; Electrical conductivity; Frequency effect; SCHOTTKY-BARRIER DIODES; VOLTAGE-DEPENDENCE; FREQUENCY; TEMPERATURE; PARAMETERS; PROFILE;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the ac conductivity, complex dielectric and modulus properties of Au/(Cu2O-CuO) doped-PVA/n-Si (MPS) structure. The parameters such as dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), ac conductivity (sigma(ac)) and complex electric modulus (M*) were obtained using admittance (capacitance and conductance) values measured in 10 kHz-5 MHz frequency range and 1 V-4 V positive voltage range. While the epsilon' and epsilon '' value increase with decrease in frequency, the sigma(ac) value decreases. The values of real (M') and imaginary (M '') part of complex modulus were obtained from the epsilon' and epsilon '' values. M' value increases with increasing frequency and decrease with increasing voltage. The M '' versus logf plots indicate give a peak.
引用
收藏
页码:256 / 260
页数:5
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