Dielectric, ac conductivity and electric modulus studies at MPS structure with (Cu2O-CuO)-doped PVA interfacial layer

We have investigated the ac conductivity, complex dielectric and modulus properties of Au/(Cu2O-CuO) doped-PVA/n-Si (MPS) structure. The parameters such as dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), ac conductivity (sigma(ac)) and complex electric modulus (M*) were obtained using admittance (capacitance and conductance) values measured in 10 kHz-5 MHz frequency range and 1 V-4 V positive voltage range. While the epsilon' and epsilon '' value increase with decrease in frequency, the sigma(ac) value decreases. The values of real (M') and imaginary (M '') part of complex modulus were obtained from the epsilon' and epsilon '' values. M' value increases with increasing frequency and decrease with increasing voltage. The M '' versus logf plots indicate give a peak.