Enhancement of near-band edge photoluminescence of ZnO film buffered with TiN

被引：9
作者：
Achour, A. [1 ]
Aissa, K. Ait [1 ]
Mbarek, M. [2 ]
El Hadj, K. [1 ]
Ouldhamadouche, N. [3 ]
Barreau, N. [1 ]
Le Brizoual, L. [1 ]
Djouadi, M. A. [1 ]
机构：
[1] Univ Nantes, CNRS, IMN, Inst Mat Jean Rouxel, F-44322 Nantes, France
[2] Univ Monastir, Fac Sci Monastir, Unite Rech Mat Nouveaux & Dispositifs Elect Organ, Monastir 5000, Tunisia
[3] Univ Sci & Technol Houari Boumediene, Lab Phys Mat, Bab Ezzouaur, Algeria
来源：
THIN SOLID FILMS | 2013年 / 538卷
关键词：
TiN; ZnO film; Photoluminescence; RF-sputtering; Buffer layer; THIN-FILMS; OPTICAL-PROPERTIES; PREFERRED ORIENTATION; EPITAXIAL-GROWTH; RAMAN; XPS; TEMPERATURE; SUBSTRATE; SPECTROSCOPY; LAYERS;
D O I：
10.1016/j.tsf.2012.11.117
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO films were deposited on Si substrate by RF-sputtering using titanium nitride (TiN) as buffer layer that was deposited at different thicknesses: 160 and 2290 nm. Despite the lattice mismatch of up to 6.35% between ZnO and TiN, the ZnO films deposited on TiN buffer layers show enhanced near-band-edge photoluminescence (PL) emission at room temperature which is two times higher of magnitude than those grown directly on Si. The PL enhancement intensity, provided by TiN buffer introduction, is attributed to the improvement of ZnO crystalline quality and stoichiometry. The use of a good electrical conductor which has high thermal stability like TiN as buffer layer for the blue emission enhancement of ZnO would make it promising for optoelectronic applications. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：71 / 77
页数：7
相关论文
共 47 条
[1]   Preparation and characterization of transparent ZnO thin films obtained by spray pyrolysis [J].
Ayouchi, R ;
Leinen, D ;
Martín, F ;
Gabas, M ;
Dalchiele, E ;
Ramos-Barrado, JR .
THIN SOLID FILMS, 2003, 426 (1-2) :68-77
[2]   Misfit reduction by a spinel layer formed during the epitaxial growth of ZnO on sapphire using a MgO buffer layer [J].
Bakin, A. ;
Kioseoglou, J. ;
Pecz, B. ;
El-Shaer, A. ;
Mofor, A. -C. ;
Stoemenos, J. ;
Waag, A. .
JOURNAL OF CRYSTAL GROWTH, 2007, 308 (02) :314-320
[3]   Analysis on Binding Energy and Auger Parameter for Estimating Size and Stoichiometry of ZnO Nanorods [J].
Bera, Santanu ;
Dhara, Sandip ;
Velmurugan, S. ;
Tyagi, A. K. .
INTERNATIONAL JOURNAL OF SPECTROSCOPY, 2012,
[4]   Preparation and characterization of Al and Mn doped ZnO (ZnO: (Al, Mn)) transparent conducting oxide films [J].
Cao, HT ;
Pei, ZL ;
Gong, J ;
Sun, C ;
Huang, RF ;
Wen, LS .
JOURNAL OF SOLID STATE CHEMISTRY, 2004, 177 (4-5) :1480-1487
[5]   Fabrication of a TiNx/Ni/Au Contact on ZnO Films With High Thermal Stability and Low Resistance [J].
Chai, J. W. ;
Yang, M. ;
Chi, D. Z. ;
Ong, June L. T. ;
Wang, S. J. ;
Zhang, Z. ;
Pan, J. S. ;
Feng, Y. P. ;
Chua, S. J. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (12) :4297-4300
[6]   X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films [J].
Chen, M ;
Wang, X ;
Yu, YH ;
Pei, ZL ;
Bai, XD ;
Sun, C ;
Huang, RF ;
Wen, LS .
APPLIED SURFACE SCIENCE, 2000, 158 (1-2) :134-140
[7]   Effect of annealing temperature on the characteristics of ZnO thin films [J].
Chen, Yi ;
Nayak, Jyoti ;
Ko, Hyun-U ;
Kim, Jaehwan .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2012, 73 (11) :1259-1263
[8]   Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam [J].
Chen, ZQ ;
Kawasuso, A ;
Xu, Y ;
Naramoto, H ;
Yuan, XL ;
Sekiguchi, T ;
Suzuki, R ;
Ohdaira, T .
PHYSICAL REVIEW B, 2005, 71 (11)
[9]  
Chu S, 2011, NAT NANOTECHNOL, V6, P506, DOI [10.1038/nnano.2011.97, 10.1038/NNANO.2011.97]
[10]   Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films [J].
Cong, GW ;
Peng, WQ ;
Wei, HY ;
Han, XX ;
Wu, JJ ;
Liu, XL ;
Zhu, QS ;
Wang, ZG ;
Lu, JG ;
Ye, ZZ ;
Zhu, LP ;
Qian, HJ ;
Su, R ;
Hong, CH ;
Zhong, J ;
Ibrahim, K ;
Hu, TD .
APPLIED PHYSICS LETTERS, 2006, 88 (06)
12345