FD-SOI material enabling CMOS technology disruption from 65nm to 12nm and beyond

被引：0
|
作者：
Schwarzenbach, W. [1 ]
Sellier, M. [1 ]
Nguyen, B. -Y. [1 ]
Girard, C. [1 ]
Maleville, C. [1 ]
机构：
[1] SOITEC, Parc Technol Fontaines Bernin, F-38926 Crolles, France
来源：
2017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT) | 2017年
关键词：
Fully-Depleted; Ultra -thin SOI; Ultra -thin BOX; THICKNESS;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
Multiples technology nodes in production are now based on FD-SOI thin film substrates. The development of these substrates has required several technical innovations (SmartCut process adaptation, new metrology introduction), which are discussed in this paper.
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页数：2
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