Radiated Reliability for 0.35μm SiGe BiCMOS Technology

被引：0
|
作者：
Wu, Xue [1 ]
Cui, Wei [1 ]
Zhu, Kunfeng [2 ]
Yang, Yonghui [2 ]
Tan, Kaizhou [1 ]
Tang, Zhaohuan [1 ]
机构：
[1] Sci & Technol Analog Integrated Circuit Lab, Chongqing 400060, Peoples R China
[2] Chongqing Semichip Elect Co Ltd, Chongqing 401332, Peoples R China
来源：
2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2017年
关键词：
SHALLOW-TRENCH ISOLATION; DOSE-RATE SENSITIVITY; TRANSISTORS; CHALLENGES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An investigation of radiated reliability of HBT and MOSFET which fabricated on 0.35 mu m SiGe BiCMOS technology is presented under dose rates of 500 mGy(Si)/s and 1 mGy(Si)/s with a Co-60 gamma irradiation source. Gummel characteristics of SiGe HBT and transfer characteristics of MOSFET are measured before and after irradiation. Base current (I-B), leakage current (I-OFF) and threshold voltage (V-TH) are extracted from gummel and transfer characteristics. Our results show that there is a slight increase in IB and an observed decrease in for SiGe HBT device. For NMOS transistor, a conspicuous increase in I-OFF and slight drift in V-TH. No dose-rate effect has been seen in SiGe HBT devices; however, it has been observed in NMOS transistors.
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页数：4
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