Contribution to the characterization of the hump effect in MOSFET submicronic technologies

被引：8
作者：
Brut, H [1 ]
Velghe, RMDA [1 ]
机构：
[1] STMicroelectronics, Crolles Ctr Commun, Cent R&D Modeling & Characterizat, F-38926 Crolles, France
来源：
ICMTS 1999: PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 1999年
关键词：
D O I：
10.1109/ICMTS.1999.766241
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method allowing:the automatic characterization of the subthreshold hump effect is presented in this paper. It makes use of a variable transformation based on observations made with a hump-model. This model considers two sub-transistors with different threshold voltages in parallel. The extracted parameters are the hump effect magnitude the weak inversion slope and the extrapolated leakage current at Vg=0V. After implementation in our automatic test system, the routine has been successfully applied to the 0.25 mu m technology of the Crolles Centre Commun. The efficiency and the reliability of this routine are demonstrated whatever the operating biasing and temperature. It is noticed that this method is a useful tool to monitor and study the hump effect.
引用
收藏
页码：188 / 193
页数：6
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