Mechanical stresses and amorphization of ion-implanted diamond

被引:25
作者
Khmelnitsky, R. A. [1 ]
Dravin, V. A. [1 ]
Tal, A. A. [1 ]
Latushko, M. I. [2 ]
Khomich, A. A. [2 ]
Khomich, A. V. [3 ]
Trushin, A. S. [1 ,4 ]
Alekseev, A. A. [5 ]
Terentiev, S. A. [5 ]
机构
[1] RAS, PN Lebedev Phys Inst, Moscow 117901, Russia
[2] RAS, Prokhorov Gen Phys Inst, Moscow 117901, Russia
[3] RAS, Kotelnikov Inst Radioengn & Elect, Fiyazino, Moscow Region, Russia
[4] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119991, Russia
[5] Technol Inst Superhard & Novel Carbon Mat, Moscow, Russia
关键词
Diamond; Ion-implantation; Amorphization; Mechanical stress; Swelling; RAMAN-SPECTROSCOPY; LIGHT-IONS; DAMAGE; VACANCIES; DEFECTS; GRAPHITIZATION; IRRADIATION; ABSORPTION; SIMULATION; RESONANCE;
D O I
10.1016/j.nimb.2013.03.030
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Scanning white light interferometry and Raman spectroscopy were used to investigate the mechanical stresses and structural changes in ion-implanted natural diamonds with different impurity content. The uniform distribution of radiation defects in implanted area was obtained by the regime of multiple-energy implantation of key He ions. A modification of Bosia's et al. (Nucl. Instrum. Meth. B 268 (2010) 2991) method for determining the internal stresses and the density variation in an ion-implanted diamond layer was proposed that suggests measuring, in addition to the surface swelling of a diamond plate, the radius of curvature of the plate. It is shown that, under multiple-energy implantation of He, mechanical stresses in the implanted layer may be as high as 12 GPa. It is shown that radiation damage reaches saturation for the implantation fluence characteristic of amorphization of diamond but is appreciably lower than the graphitization threshold. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:5 / 10
页数:6
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